| PART |
Description |
Maker |
| MB98A809AX |
512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K电可擦除可编程闪速存储器 12k闪光Eelectrically可擦除和可编程（闪存）记忆卡（为512k电可擦除可编程闪速存储器卡）
|
Fujitsu, Ltd.
|
| MB98A81063 MB98A81183 MB98A81473 MB98A81373 MB98A8 |
5V-Only Flash Memory Cards(V 16M闪存
|
Fujitsu Limited
|
| AM29LV008BT-70REF AM29LV008BB-70REF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Spansion, Inc.
|
| AM29F800BT-120ED AM29F800BB-70SD AM29F800BB-90SD A |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
512K X 16 FLASH 5V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
| THNCFXXXXMA THNCF064MMA THNCF128MMA THNCF1G02MA TH |
The THNCFxxxxMA series CompactFlash card is a flash technology based with ATA interface flash memory card
|
TOSHIBA[Toshiba Semiconductor]
|
| AM29LV002BT-70EF AM29LV002BB-120ED |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 3V PROM, 70 ns, PDSO40
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
|
Spansion, Inc.
SPANSION LLC
|
| M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8，启动座单电源闪
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| ACE25Q400G |
4M BIT SPI NOR FLASH Memory Series
|
ACE Technology Co., LTD...
|
